Patterned polymer multilayers as etch resists

Citation
Wts. Huck et al., Patterned polymer multilayers as etch resists, LANGMUIR, 15(20), 1999, pp. 6862-6867
Citations number
46
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
LANGMUIR
ISSN journal
07437463 → ACNP
Volume
15
Issue
20
Year of publication
1999
Pages
6862 - 6867
Database
ISI
SICI code
0743-7463(19990928)15:20<6862:PPMAER>2.0.ZU;2-7
Abstract
This paper describes the synthesis and characterization of patterned polyme r multilayers on self-assembled monolayers (SAMs) and the use of these stru ctures as etch resists for gold. The procedure used to build polymer multil ayers consisted of five steps: (i) A polar thiol-HS(CH2)(15)COOH-was patter ned on gold or silver films by microcontact printing (mu CP) with a poly(di methylsiloxane) (PDMS) stamp. (ii) The patterned surface was placed in a so lution containing CH3(CH2)(15)SH to form a nonpolar, methyl-terminated SAM on the remaining bare metal surface. (iii) The regions of the SAM patterned with CO2H groups were activated for further chemical reaction by conversio n into interchain anhydride groups. (iv) The activated substrate was allowe d to react with poly(ethylene imine) (PEI, branched chain, M-w 750 000). (v ) A second polymer layer was attached to the PEI layer by allowing the amin e-terminated surface to react with poly(octadecene-alt-maleic anhydride) (P OMA, M-w 30 000) or poly(styrene-alt-maleic anhydride) (PSMA, M-w 350 000). This procedure (alternating reaction with PEI and POMA/PSMA) was repeated up to five times to increase the number of layers and the thickness of the patterned structure. The polymer multilayers were characterized using atomi c force microscopy (AFM), ellipsometry, and polarized infrared external ref lectance spectroscopy (PIERS). The stability of the films was demonstrated by using the patterned polymer multilayers as etch resists and by measuring their breakdown voltages.