Single-electron transistors fabricated from a highly doped SOI film

We propose Doped-Thin-Si-Film Single-Electron-Transistors (DS-SETs) which a re fabricated from a highly-doped SOI (Silicon-on-Insulator) film by using a calixarene negative resist. The structure can be well controlled, so a DS -SET with a 45-nm-diameter island showed nearly ideal SET characteristics w ith a charging energy of 1.4 meV. Our results demonstrate that single elect ron tunneling occurs through a single island without any isolated islands f ormed due to potential fluctuations. We also discuss the discreteness of en ergy levels in a Si island.