Development of poly-Si TFT in NEC

This paper is an introduction to a group of five papers on poly-Si Thin Fil m Transistor (TFT) research and development within NEC. Poly-Si TFT is a co re technology for next generation LCDs (Liquid Crystal Displays), sensors a nd other application devices. Especially, low temperature poly-Si TFTs are very promising because of their wide application range. NEC Corporation has been conducting research of low temperature poly-Si process such as excime r laser process technology including annealing and doping, process temperat ure lowering by RPCVD (Remote Plasma-Enhanced Chemical Vapor Deposition), a nd development of many kinds of input/outoput devices, especially light val ves and novel pen-shaped scanner. Future research would create a new market by developing plastic substrate compatible process and single crystalline silicon on a glass substrate.