A 200/400dpi photodiode-array integrated image sensor with a poly-Si TFT driver
Citation
H. Haga et al., A 200/400dpi photodiode-array integrated image sensor with a poly-Si TFT driver, NEC RES DEV, 40(4), 1999, pp. 437-440
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
NEC RESEARCH & DEVELOPMENT
SICI code
0547-051X(199910)40:4<437:A2PIIS>2.0.ZU;2-J
Abstract
A 200/400dpi resolution-selectable linear image sensor with poly-Si TFT (Th
in Film Transistor) driver was fabricated on an inexpensive glass substrate
using a line-beam excimer laser process. A 400dpi-photodiode array, a 200d
pi-photodiode array and a CMOS driver with a decoder circuit were all integ
rated on the same substrate. It was operated at 2MHz with a single supply v
oltage of 5V successfully. The output signal of the 200dpi-photodiode array
was four times larger than the 400dpi array. Excellent spatial resolution
was obtained at both resolution settings by our compact imaging configurati
on, SOFI (Single Optical Fiber Imaging), using this image sensor. When this
image sensor is applied for a hand-held scanner, the user will have a choi
ce between fast coarse-resolution and slow fine-resolution scanning.