Interconnected UHV facilities for materials preparation and analysis

A UHV system for in-situ preparation and analysis of ultra thin films has b een built. The system includes a rapid thermal processing furnace which all ows production of samples over a wide range of temperatures and pressures u sing isotopically enriched gases. XPS, AES, and LEED analyses provide infor mation on the surface structure and composition. With a transportable UHV c hamber, the samples can be transferred to a 4 pi gamma-ray spectrometer fac ility (in UHV), where analytical ion beam methods can be used to determine isotopic depth profiles and total amounts of isotopes in the films. Further more, an ion beam deposition facility (in UHV) can produce isotopically enr iched silicon films on Si substrates for in situ isotopic tracing. (C) 1999 Elsevier Science B.V. All rights reserved.