Luminescence of zinc telluride layers prepared by technique of solid-phasesubstitution reactions

Photoluminescence of the ZnTe layers prepared by the technique of solid-pha se substitution reactions on monocrystalline ZnSe substrates is studied. Th e luminescence spectrum in the visible region consists of three overlapped edge bands. These bands are related to the interband recombination, transit ions of free electrons to acceptor levels of single-charged zinc vacancy, a nd the recombination involving donor-acceptor pairs consisting of a doubly charged zinc vacancy and an interstitial zinc atom.