Interstitial carbon in copper: electronic and mechanical properties

The effects of interstitial carbon on the electronic and: mechanical proper ties of copper are studied theoretically. Semiempirical methodology, atomis tic simulations and first-principles density-functional embedded-cluster sc hemes are combined to extract some understanding of the diffusion: process and related degradation of Cu-C composite materials under extremes of tempe rature and stress. High-resolution scanning electron microscopy results are presented, which demonstrate the existence of a solid solution zone at the Cu-C interface.