Influence of hydrogen on the structure and properties of tetrahedral amorphous carbon films obtained by the filtered cathodic vacuum arc technique

Citation
Lk. Cheah et al., Influence of hydrogen on the structure and properties of tetrahedral amorphous carbon films obtained by the filtered cathodic vacuum arc technique, PHIL MAG B, 79(10), 1999, pp. 1647-1658
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
ISSN journal
13642812 → ACNP
Volume
79
Issue
10
Year of publication
1999
Pages
1647 - 1658
Database
ISI
SICI code
1364-2812(199910)79:10<1647:IOHOTS>2.0.ZU;2-Z
Abstract
Hydrogenated tetrahedral amorphous carbon (ta-C:H) films prepared by filter ed cathodic vacuum are at different hydrogen partial pressures (0.0008-0.5 mTorr) were studied in terms of their structure and properties. It is shown that a single Breit-Wigner-Fano (BWF) line shape is appropriate to fit the Raman spectra acquired from the ta-C:H films deposited at a hydrogen parti al pressure of 0.0008-0.08 mTorr. However, the: single BWF fit shows a resi dual near 1350 cm(-1) for the film deposited at a higher hydrogen partial p ressure. This indicates the presence of graphitic clusters in the correspon ding film. The data from infrared spectroscopy show that the hydrogen in th e ta-C:H films is associated with triply bonded spl, CHn sp(2) and CHn sp(3 ) bonding. The absorption for the CHn sp(3) is maximum for ta-C:H at a hydr ogen partial pressure of 0.008 mTorr. It was observed that the film hardnes s and:compressive stress are about 70 GPa and 12 GPa respectively cor respo nding to the hydrogen partial pressure from 0.0008 to 0.02 mTorr. When I:he hydrogen partial pressure further increases from 0.02 to 0.5 mTorr, the ha rdness and compressive stress decrease to about 50 GPa and 8 GPa respective ly. The optical bandgap is about 3.0 eV for the ta-C:H film deposited at hy drogen partial pressure of 0.008 mTorr compared with 2.7 eV for the hydroge n free ta-C films. A lower intraband absorption coefficient of the-ta-C:H s ample (hydrogen partial pressure, 0.008 mTorr) indicates that the defect st ates are lower in this sample.