Epitaxial growth of electrodeposited cadmium selenide on (111) gallium arsenide

Authors
Cachet, H Cortes, R Froment, M Maurin, G
Citation
H. Cachet et al., Epitaxial growth of electrodeposited cadmium selenide on (111) gallium arsenide, PHIL MAG L, 79(10), 1999, pp. 837-840
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE LETTERS
ISSN journal
09500839 → ACNP
Volume
79
Issue
10
Year of publication
1999
Pages
837 - 840
Database
ISI
SICI code
0950-0839(199910)79:10<837:EGOECS>2.0.ZU;2-L
Abstract
Epitaxial growth of CdSe has been achieved on (111) GaAs by electrodepositi on from an aqueous electrolyte. The structure of the film corresponds to th e cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high-energy electron diffraction, transmission electron micro scopy and X-ray diffraction techniques.