Magnetic-field induced generation of A-like centers in Cz-Si crystals

The effect of the constant magnetic-field induced generation of oxygen-vaca ncy defects in Czochralski-grown silicon crystals was detected for the firs t time. The qualitative theory of the effect is given. It assumes that the effect arises from excitation of the Si-O bond of interstitial oxygen and i s valid for both constant and pulsed magnetic fields. Experimental verifica tion of the theory in the combined constant and pulsed fields strongly conf irmed it. (C) 1999 Published by Elsevier Science B.V. All rights reserved.