CHARACTERIZATION OF TITANIUM NITRIDE FILMS PREPARED BY DC REACTIVE MAGNETRON SPUTTERING AT DIFFERENT NITROGEN PRESSURES

Titanium nitride films have been grown onto glass substrates by d.c. r eactive magnetron sputtering from a titanium metallic target at differ ent nitrogen partial pressures. The influence of the nitrogen pressure on structural, electrical and optical properties of TiN films was inv estigated by measuring their X-ray diffraction, scanning electron micr oscopy, optical reflectance and electrical resistivity. The films show the (111) preferred orientation, the (111) peak intensity decreases a s the nitrogen partial pressure is increased. The films have columnar structure and the grain size both along the sample surface and normal to the sample surface increases as the nitrogen partial pressure is in creased. The film resistivity has been related with the variation of t he film structure. The film, which has high(111) diffraction peak inte nsity, has high resistivity.