Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography and large-scale computation

Citation
M. Watanabe et al., Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography and large-scale computation, PROG CRYST, 38(1-4), 1999, pp. 215-238
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
ISSN journal
09608974 → ACNP
Volume
38
Issue
1-4
Year of publication
1999
Pages
215 - 238
Database
ISI
SICI code
0960-8974(1999)38:1-4<215:DOANSO>2.0.ZU;2-O
Abstract
Control of melt flow during Czochralski (CZ) crystal growth by application of magnetic fields is an important technique for large-diameter (>300 mm) s ilicon single crystals. Melt convection under magnetic fields is an interes ting problem for electromagnetic-hydrodynamics. This paper reviews the effe cts of a vertical magnetic field and a cusp-shaped magnetic field on melt f low during CZ crystal growth. Melt flow in vertical magnetic fields or cusp -shaped magnetic fields was investigated by the direct observation method b ased on X-ray radiography and by numerical simulation. The first part of th is review shows the result of direct observation of molten silicon flow und er magnetic fields. It also compares the results of experimental and numeri cal simulation. The second part shows the details of the numerical simulati on of the behavior of molten silicon in magnetic fields.