Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography and large-scale computation
M. Watanabe et al., Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography and large-scale computation, PROG CRYST, 38(1-4), 1999, pp. 215-238
Control of melt flow during Czochralski (CZ) crystal growth by application
of magnetic fields is an important technique for large-diameter (>300 mm) s
ilicon single crystals. Melt convection under magnetic fields is an interes
ting problem for electromagnetic-hydrodynamics. This paper reviews the effe
cts of a vertical magnetic field and a cusp-shaped magnetic field on melt f
low during CZ crystal growth. Melt flow in vertical magnetic fields or cusp
-shaped magnetic fields was investigated by the direct observation method b
ased on X-ray radiography and by numerical simulation. The first part of th
is review shows the result of direct observation of molten silicon flow und
er magnetic fields. It also compares the results of experimental and numeri
cal simulation. The second part shows the details of the numerical simulati
on of the behavior of molten silicon in magnetic fields.