Al. Gurskii et Sv. Voitikov, Quantum defect approach for the effect of electron-phonon coupling on impurity recombination in semiconductors, SOL ST COMM, 112(6), 1999, pp. 339-343
Recombination via impurity states in wide gap semiconductors affected by ch
arge-phonon coupling has been investigated and modeled in the framework of
the quantum defect approach. The Huang-Rhys factor being a measure of elect
ron phonon interaction has been calculated for free-to-acceptor and donor-a
cceptor recombination involving impurity centers with arbitrary ionization
energies. The calculations have been performed for ZnSe. The model permits
adequate describing of impurity recombination band shape in doped ZnSe. (C)
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