Electrodeposition and characterization of CdSexTe1-x semiconducting thin films

Thin polycrystalline films of cadmium chalcogenides CdSexTe1-x (0 less than or equal to x less than or equal to 1) have been prepared by electrochemic al plating on ITO (indium tin oxide) coated glass substrates from an acid s ulfate solution at 90 degrees C. Structural, morphological and compositiona l studies of the deposited films are reported as a function of the x coeffi cient. XRD analysis shows that all deposits have a cubic structure with a p referred orientation along the (111) direction. The composition in the film s is found to vary linearly with the composition in the solution. The incre ase in the selenium content x in the CdSexTe1-x, films decreases the lattic e constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.