Plasma doping: Progress and potential - Part two of two

Plasma doping is the leading candidate to replace today's beam-line ion imp lantation, which is being pushed to the limit by the need for ultra-shallow junctions. Cluster-compatible hardware is envisioned to provide simpler, m ore economical, higher-throughput wafer processing. Part one of this articl e, in the September issue of SST, reviewed the status of plasma doping, cit ed device data, and touched on process and equipment issues. Part two discu sses potential problems, including charge damage, equipment requirements, a nd economic factors.