High temperature dismantling of Si atomic lines on beta-SiC(100)

We use high-temperature scanning tunneling microscopy (STM) to investigate the temperature-induced Si atomic line dynamics on the beta-SiC(100) surfac e. These atomic lines are imaged up to 1200 K (probably the highest tempera ture STM imaging) and break at slightly higher temperatures. Their dismantl ing results from individual and collective atomic mechanisms including (i) one-by-one dimer removal, (ii) lateral motion of Si atomic lines and (iii) global surface migration of Si atoms resulting in two-dimensional island fo rmation and melting at 1225 K. Overall, the results suggest that Si is ther mally removed primarily at step edges. (C) 1999 Elsevier Science B.V. All r ights reserved.