Diamond thin film grown homoepitaxially on diamond (001) substrate by microwave plasma CVD method studied by reflection high-energy electron diffraction and atomic force microscopy
T. Takami et al., Diamond thin film grown homoepitaxially on diamond (001) substrate by microwave plasma CVD method studied by reflection high-energy electron diffraction and atomic force microscopy, SURF SCI, 440(1-2), 1999, pp. 103-115
A diamond thin film surface produced homoepitaxially on C(001) substrate by
microwave plasma chemical vapor deposition (CVD) has been studied using re
flection high-energy electron diffraction (RHEED) and atomic force microsco
py (AFM). The RHEED patterns showed C(001)2 x 1/1 x 2 double-domain structu
re. Wide RHEED patterns with many Kikuchi patterns qualitatively show the h
igh crystallinity of the diamond thin film. The AFM images taken from the s
ame sample with atomic-scale resolution in air showed mostly (001) surface;
2 x I but locally 1 x 1 structure, which is in agreement with the RHEED me
asurement, although (111) surface was observed rarely. The (111) plane obse
rved rarely was tilted by 15.7 degrees from the (001) substrate, which can
be explained by the twinning structure in the thin film. The local 2 x 1 st
ructure on the (111) plane appears by scanning with the AFM tip; tip-induce
d surface reconstruction. (C) 1999 Elsevier Science B.V. All rights reserve
d.