Solid phase epitaxy for low pressure chemical vapor deposition Si films induced by ion implantation

This work investigated the ion implantation induced solid phase epitaxy (SP E) of Si thin films prepared by low pressure chemical vapor deposition (LPC VD). Previous studies indicate that the residual layer at the interface bet ween the Si thin film and single crystalline substrate is the major obstacl e to the SPE process of Si film. In this work, Ge+ and Si+ ion were implant ed to completely amorphize the Si film prepared by LPCVD. Ion implantation also mixed the interfacial oxide layer and its effects on subsequent epitax ial growth of Si film subjected to various annealing conditions were discus sed as well. In addition, the specimen surface was modified by inductive co uple plasma (ICP) process. The ICP modification using nitrogen gas could fo rm a vacancy source on the sample surface to enhance the atomic diffusion r are and change the stress state in the vicinity of surface, thereby acceler ating the SPE process. (C) 1999 Elsevier Science S.A. All rights reserved.