Effect of growth interruptions on the interfaces of InGaAs/AlAsSb superlattice

The effect of growth interruption times combined with selective group-V spe cies exposure of InGaAs/AlAsSb short-period superlattice structure was inve stigated with photoluminescence, x-ray diffraction, and reflection high-ene rgy electron diffraction. Reflection electron diffraction shows surface rec onstruction transitions dependent on the time and species type exposure pro cedure. A shift in the photoluminescence peak position is observed from sam ples grown under different species type exposure compared to the samples gr own without interruption, Sb termination being at a lower energy and As ter mination at higher energy, respectively. This is interpreted in terms of in creased mixing of Sb in the interface InGaAs layers. (C) 1999 American Inst itute of Physics. [S0003-6951(99)01042-6].