An initiation mechanism of thermal instability of a metal-diamond-vacuum field emission regime

Citation
Ns. Xu et al., An initiation mechanism of thermal instability of a metal-diamond-vacuum field emission regime, APPL PHYS L, 75(16), 1999, pp. 2383-2385
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
16
Year of publication
1999
Pages
2383 - 2385
Database
ISI
SICI code
0003-6951(19991018)75:16<2383:AIMOTI>2.0.ZU;2-6
Abstract
An analysis is carried out of the physical origin of thermal instability th at can trigger a catastrophic vacuum breakdown event in vacuum microelectro nic devices based on flat diamond emitters. The temperature rise in a diamo nd film will enhance internal field emission across metal-diamond interface . This effect can lead to a regenerative process that can initiate a breakd own event at temperature lower than the melting point of an emitter. A set of equations has been developed. These theoretical findings are successfull y applied to explain the instability of field emission from the nondoped di amond films. (C) 1999 American Institute of Physics. [S0003-6951(99)01942-7 ].