Electron energy dependence of metal-oxide-semiconductor degradation

Using a variety of electron injection techniques, defect generation and deg radation in thin gate oxide devices are unequivocally shown to be related t o the electron energy of the carriers impinging on the silicon contacts to the oxide layer and not due to the oxide electric field. Also, nonuniform c hannel-hot-electron degradation is shown to be due to the same fundamental mechanism as that observed under uniform degradation conditions using eithe r direct tunneling, Fowler-Nordheim tunneling, or substrate-hot-electron in jection. Additive defect generation from all three degradation modes is dis cussed in terms of realistic device operation. (C) 1999 American Institute of Physics. [S0003-6951(99)01842-2].