Large-scale synthesis of single crystalline gallium nitride nanowires

Large-scale synthesis of single crystalline GaN nanowires in anodic alumina membrane was achieved through a gas reaction of Ga2O vapor with a constant flowing ammonia atmosphere at 1273 K. X-ray diffraction, Raman backscatter ing spectroscopy, scanning electron microscopy, and transmission electron m icroscopy indicated that those GaN nanowires with hexagonal wurtzite struct ure were about 14 nm in diameter and up to several hundreds of micrometers in length. The growth mechanism of the single crystalline GaN nanowires is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)05342-5].