Switching of vertical giant magnetoresistance devices by current through the device

Experiments are reported that demonstrate current-perpendicular-to-the-plan e giant magnetoresistance devices can be switched repeatably between the hi gh- and low-resistance states by passing current vertically through the str ucture. The lithographically patterned devices, having diameters in the ran ge of 0.3-0.7 mu m, operate at room temperature and exhibit distinctly sepa rate switching of the soft and hard layers. Designs for magnetoelectronic r andom access memory can utilize this scheme for storing and reading informa tion. (C) 1999 American Institute of Physics. [S0003-6951(99)04642-2].