Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)(1-x)TixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si

Authors
Lin, CH Lee, SW Chen, H Wu, TB
Citation
Ch. Lin et al., Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)(1-x)TixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si, APPL PHYS L, 75(16), 1999, pp. 2485-2487
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
16
Year of publication
1999
Pages
2485 - 2487
Database
ISI
SICI code
0003-6951(19991018)75:16<2485:DPOMCV>2.0.ZU;2-Z
Abstract
Highly (100) textured Pb(ScTa)(1-x)TixO3 (x = 0-0.3) thin films were grown on LaNiO3/Pt/Ti electrode-coated Si substrate using metal-organic chemical vapor deposition at 685 degrees C. Ti addition was introduced to modify the dielectric properties. Diffuse phase transition, typical of relaxor ferroe lectrics was noticed. As Ti content increased from 0% to 30%, the phase tra nsition temperature (T-max) gradually shifted from -10 to 120 degrees C wit h the dielectric constant at T-max increased from 1397 to 1992 (1 kHz). Los s tangent values are generally below 0.025. (C) 1999 American Institute of Physics. [S0003-6951(99)05142-6].