Conductance spikes in single-walled carbon nanotube field-effect transistor

Nanoscale field-effect transistor (FET) has been fabricated from single-wal led carbon nanotubes (CNTs). At similar to 5 K, the transistor shows pronou nced field effect. Most interestingly, reproducible spikes are observed in the channel conductance as a function of the gate voltage. These conductanc e spikes are attributed to van Hove singularities in the electronic density of states in the carbon nanotubes. Based on the observation of these condu ctance spikes, a mechanism is proposed for the charge transport in CNT FETs . (C) 1999 American Institute of Physics. [S0003-6951(99)04039-5].