Stress-dependent growth kinetics of ultraviolet-induced refractive index change and defect centers in highly Ge-doped SiO2 core fibers

Citation
Te. Tsai et al., Stress-dependent growth kinetics of ultraviolet-induced refractive index change and defect centers in highly Ge-doped SiO2 core fibers, APPL PHYS L, 75(15), 1999, pp. 2178-2180
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
15
Year of publication
1999
Pages
2178 - 2180
Database
ISI
SICI code
0003-6951(19991011)75:15<2178:SGKOUR>2.0.ZU;2-T
Abstract
The evolution of the index change of type-IIa gratings observed in 28 mol % Ge-SiO2 core fibers with 1.8 mu m core diameter under various strains was measured from the optical spectra, and the induced defects at high and low strains were studied with electron spin resonance. Data will be presented t o show that the index modulation (Delta n(mod)) of type-IIa gratings is lik ely associated with Ge E-' centers. (C) 1999 American Institute of Physics. [S0003-6951(99)04141-8].