Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition

We have recently reported the occurrence of phase separation in InxGa1-xN s amples with x > 0.25. Theoretical studies have suggested that InxGa1-xN can phase-separate asymmetrically into a low InN% phase and an ordered high In N% phase. In this letter, we report on the existence of simultaneous phase separation and ordering of InxGa1-xN samples with x > 0.25. In these sample s, phase separation was detected by both transmission electron microscopy s elected area diffraction (TEM-SAD) and x-ray diffraction. Ordering was dete cted by both imaging and TEM-SAD. (C) 1999 American Institute of Physics. [ S0003-6951(99)02241-X].