X-ray-absorption studies of boron-doped diamond films

Citation
Hh. Hsieh et al., X-ray-absorption studies of boron-doped diamond films, APPL PHYS L, 75(15), 1999, pp. 2229-2231
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
15
Year of publication
1999
Pages
2229 - 2231
Database
ISI
SICI code
0003-6951(19991011)75:15<2229:XSOBDF>2.0.ZU;2-F
Abstract
X-ray-absorption near-edge structure (XANES) measurements have been perform ed for a variety of boron-doped and undoped diamond films at the C K edge u sing the sample drain current mode. The C K-edge XANES spectra of B-doped d iamonds resemble that of the undoped diamond regardless of the B concentrat ion, which suggests that the overall bonding configuration of the C atom is unaltered. B impurities are found to enhance both the sp(3)- and sp(2)-bon d derived resonance features in the XANES spectra. (C) 1999 American Instit ute of Physics. [S0003-6951(99)05138-4].