Charge-trapping properties of gate oxide grown on nitrogen-implanted silicon substrate

Charge-trapping properties of ultrathin gate oxide grown on a nitrogen-impl anted silicon substrate were investigated using high-field Fowler-Nordheim injection. By applying an empirical model and monitoring threshold voltage shift due to current stress, it was found that both hole trapping and elect ron trapping are suppressed in the nitrogen-implanted oxide. Smaller trap-g eneration rate compared to pure SiO2 film was also noticed. Our results ind icate that nitrogen implantation into silicon substrate before gate oxide g rowth is an alternate way to incorporate nitrogen into the Si/SiO2 interfac e. (C) 1999 American Institute of Physics. [S0003-6951(99)04941-4].