Light emission spectra of individual GaAs quantum wells induced by scanning tunneling microscope

Authors
Tsuruoka, T Ohizumi, Y Tanimoto, R Ushioda, S
Citation
T. Tsuruoka et al., Light emission spectra of individual GaAs quantum wells induced by scanning tunneling microscope, APPL PHYS L, 75(15), 1999, pp. 2289-2291
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
15
Year of publication
1999
Pages
2289 - 2291
Database
ISI
SICI code
0003-6951(19991011)75:15<2289:LESOIG>2.0.ZU;2-0
Abstract
We have investigated the light emission from individual single GaAs quantum wells of cleaved (110) AlGaAs/GaAs heterostructures, using the scanning tu nneling microscope tip as a local injection source of minority carriers. Si ngle emission peaks were observed to shift to the high-energy side with dec reasing well width. The emission peaks are assigned to the transition betwe en n = 1 single-quantum-well electron and heavy-hole states of the respecti ve wells. (C) 1999 American Institute of Physics. [S0003-6951(99)05041-X].