T. Tsuruoka et al., Light emission spectra of individual GaAs quantum wells induced by scanning tunneling microscope, APPL PHYS L, 75(15), 1999, pp. 2289-2291
We have investigated the light emission from individual single GaAs quantum
wells of cleaved (110) AlGaAs/GaAs heterostructures, using the scanning tu
nneling microscope tip as a local injection source of minority carriers. Si
ngle emission peaks were observed to shift to the high-energy side with dec
reasing well width. The emission peaks are assigned to the transition betwe
en n = 1 single-quantum-well electron and heavy-hole states of the respecti
ve wells. (C) 1999 American Institute of Physics. [S0003-6951(99)05041-X].