Citation
Cy. Nakakura et al., Observation of metal-oxide-semiconductor transistor operation using scanning capacitance microscopy, APPL PHYS L, 75(15), 1999, pp. 2319-2321
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
75
Issue
15
Year of publication
1999
Pages
2319 - 2321
Database
ISI
SICI code
0003-6951(19991011)75:15<2319:OOMTOU>2.0.ZU;2-4
Abstract
We report scanning capacitance microscopy (SCM) images of a working p-chann
el metal-oxide-semiconductor field-effect transistor (P-MOSFET) during devi
ce operation. Independent bias voltages were applied to the source/gate/dra
in/well regions of the MOSFET during SCM imaging, and the effect of these v
oltages on the SCM images is discussed. (C) 1999 American Institute of Phys
ics. [S0003-6951(99)03241-6].