Deposition of thin films of gallium sulfide from a novel liquid single-source precursor, Ga(SOCNEt2)(3), by aerosol-assisted CVD

Authors
Horley, GA Lazell, MR O'Brien, P
Citation
Ga. Horley et al., Deposition of thin films of gallium sulfide from a novel liquid single-source precursor, Ga(SOCNEt2)(3), by aerosol-assisted CVD, CHEM VAPOR, 5(5), 1999, pp. 203
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
09481907 → ACNP
Volume
5
Issue
5
Year of publication
1999
Database
ISI
SICI code
0948-1907(199910)5:5<203:DOTFOG>2.0.ZU;2-P
Abstract
Group III chalcogenides are interesting materials for photovoltaic and opto electronic devices. Here the synthesis and use of a novel, single-source pr ecursor for the deposition of face-centered cubic GaS by aerosol-assisted C VD is described. The films show a high degree of orientation and an unusual spherical morphology arranged in a reasonably uniform array on the substra te (see Figure).