Microhardness of 6H-SiC epitaxial layers grown by sublimation

Authors
Kakanakova-Georgieva, A Trifonova, EP Yakimova, R MacMillan, MF Janzen, E
Citation
A. Kakanakova-georgieva et al., Microhardness of 6H-SiC epitaxial layers grown by sublimation, CRYST RES T, 34(8), 1999, pp. 943-947
Citations number
15
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTAL RESEARCH AND TECHNOLOGY
ISSN journal
02321300 → ACNP
Volume
34
Issue
8
Year of publication
1999
Pages
943 - 947
Database
ISI
SICI code
0232-1300(1999)34:8<943:MO6ELG>2.0.ZU;2-K
Abstract
Knoop microhardness of 6H-SiC layers grown by sublimation epitaxy was inves tigated. The microhardness-load curves for all of the samples were measured and then used to extract the load-independent microhardness values. The re lationships of these values to the growth time and growth rate were studied . The microhardness-depth profiles indicated that the layer/substrate inter face region had a microhardness value that differed significantly from that of both the epi-layer and the substrate.