Polytypism and phase transitions in TlInS2 and TlGaSe2 crystals

Citation
Ob. Plyushch et Au. Sheleg, Polytypism and phase transitions in TlInS2 and TlGaSe2 crystals, CRYSTALLO R, 44(5), 1999, pp. 813-817
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTALLOGRAPHY REPORTS
ISSN journal
10637745 → ACNP
Volume
44
Issue
5
Year of publication
1999
Pages
813 - 817
Database
ISI
SICI code
1063-7745(199909/10)44:5<813:PAPTIT>2.0.ZU;2-2
Abstract
Low-temperature X-ray diffraction study of TlInS2 and TlGaSe2 crystals have been performed. The thermal expansion coefficients along the [001] directi on of the crystals are determined within the temperature range 80-250 K. It is shown that the incommensurate phase with the modulation wave-vector q(i ) = (1/4 +/- 6)c* in these crystals is formed in the temperature ranges 196 -214 and 107-114 K, respectively. The polytype modification of TlGaSe2 with the lattice parameter c approximate to 120 Angstrom is revealed. No supers tructural reflections were recorded for the long-period polytype modificati on.