On kinetics of liquid-phase electroepitaxy

Kinetic effects controlling the layer growth in the process of liquid-phase electroepitaxy (LPEE) have been studied. The effect of melt stirring on th e components of the growth rate due to the partial contributions of the Pel tier effect and electromigration are analyzed. It is shown that growth by t he normal mechanism under kinetic conditions and growth under quasi-equilib rium conditions are characterized by different dependences of growth rate o n the velocity of the substrate rotation. The experiments on LPEE in the In -InSb system show that growth proceeds under almost equilibrium conditions.