Phase transitions in doped quantum paraelectrics

Authors
Kleemann, W Wang, YG Lehnen, P Dec, J
Citation
W. Kleemann et al., Phase transitions in doped quantum paraelectrics, FERROELECTR, 229(1-4), 1999, pp. 39-44
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
FERROELECTRICS
ISSN journal
00150193 → ACNP
Volume
229
Issue
1-4
Year of publication
1999
Pages
39 - 44
Database
ISI
SICI code
0015-0193(1999)229:1-4<39:PTIDQP>2.0.ZU;2-K
Abstract
Phase transitions in doped quantum paraelectrics are studied using the tran sverse Ising model. In particular, effects of random fields on the temperat ure dependence of polarization and dielectric susceptibility are simulated. The results show that random fields are responsible for the precursor beha vior observed experimentally. Simulations on the field dependence of the di electric susceptibility are performed and the results agree with the scalin g properties found on Sr1-xCaxTiO3.