NITROGEN DOPING IN ZNSE

Authors
POYKKO S PUSKA MJ KORHONEN T NIEMINEN RM
Citation
S. Poykko et al., NITROGEN DOPING IN ZNSE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 1-4
Citations number
21
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
43
Issue
1-3
Year of publication
1997
Pages
1 - 4
Database
ISI
SICI code
0921-5107(1997)43:1-3<1:NDIZ>2.0.ZU;2-9
Abstract
The origin of the p-type doping problem in ZnSe is still controversial in spite of the numerous models presented. We have studied the electr onic and structural properties of various nitrogen-related defects in ZnSe using the pseudopotential total-energy methods. The role of the d efect complexes formed by nitrogen impurities and native defects in ac ceptor compensation is discussed. (C) 1997 Elsevier Science S.A.