ZNCDSE-ZNSE HETEROSTRUCTURES GROWN BY MOVPE

Citation
T. Cloitre et al., ZNCDSE-ZNSE HETEROSTRUCTURES GROWN BY MOVPE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 16-20
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
09215107
Volume
43
Issue
1-3
Year of publication
1997
Pages
16 - 20
Database
ISI
SICI code
0921-5107(1997)43:1-3<16:ZHGBM>2.0.ZU;2-1
Abstract
We have grown graded index separate confinement heterostructures (GRIN -SCH) for microgun blue-green laser by low pressure MOVPE. A first stu dy was carried out using selenium hydride, dimethyl cadmium and two di methylzinc adducts as Se, Cd and Zn precursors respectively. This comb ination leads to intense prereactions and poor layer morphology. To li mit this problem we have then used tile tetrahydrothiophene:dimethylca dmium adduct. We have first investigated the quality of thick ZnCdSe l ayers grown using the two sets of precursors. Then, GRIN-SCH structure s grown using the two cadmium metalorganics were studied using photolu minescence and optical pumping experiments. (C) 1997 Elsevier Science S.A.