INTENSITY-DEPENDENT HOT-PHONON RELAXATION IN ZNSE

Authors
KUTZER V SIEGLE H THOMSEN C HOFFMAN A BROSER I
Citation
V. Kutzer et al., INTENSITY-DEPENDENT HOT-PHONON RELAXATION IN ZNSE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 46-48
Citations number
11
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
43
Issue
1-3
Year of publication
1997
Pages
46 - 48
Database
ISI
SICI code
0921-5107(1997)43:1-3<46:IHRIZ>2.0.ZU;2-7
Abstract
We performed time-resolved anti-Stokes Raman-scattering experiments on ZnSe crystals using pump and probe techniques. To create non-equilibr ium phonons we excited the ZnSe crystals at lambda = 632.8 nm with an intense pump pulse with a pulse duration of about 4 ps, which leads to efficient two-photon absorption and therefore to the creation of free carriers. By relaxation to the band edge, the highly excited free car riers emit longitudinal optical (LO) phonons, By varying the time dela y between the probe and the pump pulse, the dynamical behavior of the pump pulse-induced anti-Stokes Raman signal was studied. The results a re discussed with respect to plasma effects influencing the dynamical behavior of the phonon lifetime in ZnSe. (C) 1997 Elsevier Science S.A .