This work focusses on the purification of metallurgical grade silicon powde
r during its treatment in a thermal RF plasma.
The first step consists of studying the mechanisms of heat and mass transfe
r during the interaction between silicon particles and an argon plasma. The
refore we use two particle sizes (50 - 80 mu m and 80 - 125 mu m) in order
to qualify the influence of the surface area on the evaporation effect. The
measurements of the spheroidised particle diameters after their treatment
give the opportunity to define the best residence time of the particles in
the plasma. At the same time for each experimental condition both velocity
and particle evaporation are measured by Laser Doppler Anemometry (LDA) and
Optical Emission Spectroscopy (OES).
The second step proposes a modeling for the heat and mass transfer between
plasma and particle taking into account the cold gas channel in the plasma
torch. It has been estimated that the silicon particle could be melted if t
he initial diameter does not exceed 140 mu m. The correlation between model
and experimental data will permit in the future to control the melting of
the particle, the evaporation phenomenon for different plasma gases and the
ir viscosity.