MOLECULAR-BEAM EPITAXY OF BE-RELATED II-VI COMPOUNDS

Authors
LITZ T LUGAUER HJ FISCHER F ZEHNDER U LUNZ U GERHARD T RESS H WAAG A LANDWEHR G
Citation
T. Litz et al., MOLECULAR-BEAM EPITAXY OF BE-RELATED II-VI COMPOUNDS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 83-87
Citations number
4
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
43
Issue
1-3
Year of publication
1997
Pages
83 - 87
Database
ISI
SICI code
0921-5107(1997)43:1-3<83:MEOBIC>2.0.ZU;2-5
Abstract
This article will give a short overview about some aspects of the mole cular beam epitaxy (MBE) of Be-containing II-VI compounds on GaAs subs trates. BeTe, BeMgTe, BeMgZnSe, BeZnSeTe, BeZnCdSe layers and ZnSe-BeT e superlattices have been produced. The growth regime and some propert ies of these new materials will be presented here. (C) 1997 Elsevier S cience S.A.