A. Giardini et al., STRUCTURAL AND OPTICAL-PROPERTIES OF II-VI THIN-FILMS AND II-VI MULTILAYERED STRUCTURES GROWN ON SILICON BY LASER-ABLATION, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 102-107
Pulsed laser assisted deposition (PLAD) was shown to be a powerful and
versatile technique to obtain highly oriented thin films of CdSe and
CdSe/CdTe multilayers on silicon substrate. In multilayer deposition t
he choice of the buffer layer is crucial and very important if very th
in layers have to be deposited is the aim of obtaining superlattices.
II-VI compounds such as CdSe, CdTe, CdS were deposited by laser ablati
on on Si in the aim of verify which of them is the best as buffer laye
r. The effect of the substrate temperature on film orientation and com
position has been investigated by X-ray diffraction and photoluminesce
nce (PL) measurements. Multilayered structures were also deposited by
PLAD on silicon and X-ray analysis were carried out on bilayers of CdS
/CdSe/Si. Temperature dependence of photoluminescence spectra of CdSe,
CdS and CdS/CdSe films on Si substrates are reported. The best resolv
ed intrinsic photoluminescence features were obtained fur films deposi
ted on Si(111). (C) 1997 Elsevier Science S,A.