A. Manar et al., CHARACTERISTIC EXCITON PROPERTIES OF ZNS AND ZNSE FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 121-125
Epitaxial layers of ZnSe and ZnS have been grown on GaAs (100) substra
tes by low-pressure metal-organic vapor phase epitaxy (MOVPE) and etch
ed out from their substrates, The optical qualify of the layers has be
en investigated at 2 K by low-intensity reflection, transmission and p
hotoluminescence measurements. At high excitation intensities, the nea
r-band-edge luminescence has been determined in both ZnS and ZnSe samp
les. Exciton and biexciton contributions have been studied. (C) 1997 E
lsevier Science S.A.