ALTERNATIVE SUBSTRATES FOR GALLIUM NITRIDE EPITAXY - PHOTOLUMINESCENCE AND MORPHOLOGICAL INVESTIGATIONS

Authors
MIDDLETON PG TRAGERCOWAN C ODONNELL KP CHENG TS HOOPER SE FOXON CT
Citation
Pg. Middleton et al., ALTERNATIVE SUBSTRATES FOR GALLIUM NITRIDE EPITAXY - PHOTOLUMINESCENCE AND MORPHOLOGICAL INVESTIGATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 154-156
Citations number
8
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
43
Issue
1-3
Year of publication
1997
Pages
154 - 156
Database
ISI
SICI code
0921-5107(1997)43:1-3<154:ASFGNE>2.0.ZU;2-R
Abstract
Gallium nitride films grown by molecular beam epitaxy (MBE) an (0001) sapphire, lithium gallate and gallium arsenide (111)B substrates have been characterized using atomic force microscopy and photoluminescence spectroscopy. Inhomogeneities in the sapphire-based material are furt her explored via fluorescence imaging. Layers grown on GaAs substrate are shown to display superior luminescence properties and excellent su rface morphology. (C) 1997 Elsevier Science S.A.