PRISMATIC DEFECTS IN GAN GROWN ON 6H-SIC BY MOLECULAR-BEAM EPITAXY

Authors
VERMAUT P RUTERANA P NOUET G SALVADOR A MORKOC H
Citation
P. Vermaut et al., PRISMATIC DEFECTS IN GAN GROWN ON 6H-SIC BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 279-282
Citations number
13
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
43
Issue
1-3
Year of publication
1997
Pages
279 - 282
Database
ISI
SICI code
0921-5107(1997)43:1-3<279:PDIGGO>2.0.ZU;2-J
Abstract
The atomic structure of the prismatic defects in GaN layers grown on 6 H-SiC by electron cyclotron assisted MBE has been determined. High res olution images have been matched to Drum's model, which, along the [00 01] projection, corresponds to 8 and 4 atoms cycles. The 1/2[<1(1)over bar 01>] fault vector is parallel to the fault plane. (C) 1997 Elsevi er Science S.A.