D. Lollman et al., III-V NITRIDE MATERIALS - AN APPROACH THROUGH AMORPHOUS GAAS1-XNX THIN-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 283-287
We have studied the electrical properties and Raman scattering of nitr
ided amorphous GaAs thin films (a-GaAs1-xNx) on Si substrates. Film de
position was carried out by RF sputtering of a GaAs target by adding a
reactive gas (NH3) to an Ar plasma. Raman spectroscopy showed that th
e incorporated N atoms take arsenic sites. For substitution ratios bel
ow a threshold value of 25-30%, the GaAs1-xNx thin films present a rat
her homogeneous phase, while beyond, a transition corresponding to an
inhomogeneous and nanostructured material compound of amorphous GaN an
GaAs has been observed. Current measurements (J-V) on the a-GaAs1-xNx
/c-Si heterostructures clearly show increasingly high resistivities (t
owards the insulating zone) with nitrogen incorporation. Furthermore,
the C-V results obtained present MIS-like structure characteristics. (
C) 1997 Elsevier Science S.A.