Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices

Authors
Xu, YB Freeland, DJ Tselepi, M Guertler, CM Lee, WY Bland, JAC Holmes, SN Patel, NK Ritchie, DA
Citation
Yb. Xu et al., Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices, IEEE MAGNET, 35(5), 1999, pp. 3661-3663
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
35
Issue
5
Year of publication
1999
Part
2
Pages
3661 - 3663
Database
ISI
SICI code
0018-9464(199909)35:5<3661:FSHAMD>2.0.ZU;2-F
Abstract
The interface magnetic and electronic properties of two Fe/III-V semiconduc tor systems, namely Fe/GaAs and Fe/InAs, grown at room temperature have bee n studied. A "magnetic interface", which is essential for the fabrication o f magneto-electronic (ME) devices, was realized in both Fe/GaAs and Fe/InAs systems with suitable substrate processing and growth conditions. Furtherm ore, Fe/InAs was shown to have favorable interface electronic properties as Fe forms a low resistance ohmic contact on InAs. Two prototypes of ME devi ce based on Fe/InAs are also discussed.