Effect of Ir content and sputtering conditions on unidirectional anisotropy of Ni-Fe/Mn-Ir films fabricated under the extremely clean sputtering process

Citation
K. Yagami et al., Effect of Ir content and sputtering conditions on unidirectional anisotropy of Ni-Fe/Mn-Ir films fabricated under the extremely clean sputtering process, IEEE MAGNET, 35(5), 1999, pp. 3919-3921
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
35
Issue
5
Year of publication
1999
Part
2
Pages
3919 - 3921
Database
ISI
SICI code
0018-9464(199909)35:5<3919:EOICAS>2.0.ZU;2-T
Abstract
An effect of the Ir content and sputtering conditions of Mn-Ir films on the strength of exchange anisotropy was investigated in Ni-Fe/Mn-Ir layers fab ricated under the extremely clean sputtering process. We found that the uni directional anisotropy constant J(K) monotonously increased with increasing the Ir content and decreasing the deposition rate of Mn-Ir films. The chan ge of J(K) against the deposition late of Mn-Ir films Is possibly caused by the quite slight changes of the microstructure of Mn-Ir films, which were undetectable with XRD.