Heating near implanted medical devices by the MRI RF-magnetic field

Citation
Ja. Nyenhuis et al., Heating near implanted medical devices by the MRI RF-magnetic field, IEEE MAGNET, 35(5), 1999, pp. 4133-4135
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
35
Issue
5
Year of publication
1999
Part
2
Pages
4133 - 4135
Database
ISI
SICI code
0018-9464(199909)35:5<4133:HNIMDB>2.0.ZU;2-F
Abstract
The temperature rise in the vicinity of a medical implant due to the RF fie ld in Magnetic Resonance Imaging taken to be a conducting cylinder resembli ng the geometry of a commercial infusion pump. Measurements of temperature rise were made with the pump in a phantom in a clinical imager, The RF prot ocol was 20-minutes long and produced a specific absorption rate (SAR) of 0 .95 W/kg in the 34-kg phantom, In the measurements, the maximal temperature rise near the implant (0.66 degrees C) was about 3 times the control rise (0.23 degrees C) with no implant. The calculations are consistent with expe riment.