Micro-track profiles of ESD damaged AMR and GMR heads

We systematically studied the micro-track profiles of ESD damaged AMR and s pin valve GMR heads, and correlated with the dynamic electric performances of each head. Spin valve GMR heads and two types of AMR heads made by diffe rent structure and material are ESD (HBM) stressed and studied. We observed double peak in micro-track profile after more than 10 % change of MR resis tance. This means that the centers of AMR and GMR sensors become less sensi tive before the total melting of MR element during ESD zapping. We also obs erved double peak micro-track profile after pin reversal of SV head. We att ribute this to changes in the domain configuration caused by partial revers al of pinned layer moment along MR (GMR) stripe.